Product Description

Collector to Base Voltage: 20V
Collector to Emitter Voltage: 12V
Emitter to Base Voltage: 1V
Collector Current (DC): 100mA
Total Power Dissipation: mW
Transition Frequency: 7GHz

SiGe heterojunction bipolar transistor has better properties than silicon epitaxial transistor.
Pin-pin to replace of 2SC3356, 2SC4226, PBR951, BFP182.

specifications︰ The HT9356 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band. It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity. It can be applied in low noise high gain amplifier. The HT9356 is available in cost effective 3-lead SOT23, 3-lead SOT323, and 4-lead SOT143 package type.
Collector to Emitter Voltage: 12V
Collector to Base Voltage: 20V
Emitter to Base Voltage: 1V
Collector Current (DC): 100mA
Total Power Dissipation: mW
Transition Frequency: 7GHz

Advantages︰ SiGe heterojunction bipolar transistor has better properties than silicon epitaxial transistor.
Pin-pin to replace of 2SC3356, 2SC4226, PBR951, BFP182.

Export Markets︰ China, USA, Europe

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